型号 SPD07N20
厂商 Infineon Technologies
描述 MOSFET N-CH 200V 7A TO-252
SPD07N20 PDF
代理商 SPD07N20
产品目录绘图 Mosfets D-PAK, D2-PAK, TO-252
标准包装 1
系列 SIPMOS®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 200V
电流 - 连续漏极(Id) @ 25° C 7A
开态Rds(最大)@ Id, Vgs @ 25° C 400 毫欧 @ 4.5A,10V
Id 时的 Vgs(th)(最大) 4V @ 1mA
闸电荷(Qg) @ Vgs 31.5nC @ 10V
输入电容 (Ciss) @ Vds 530pF @ 25V
功率 - 最大 40W
安装类型 表面贴装
封装/外壳 TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装 PG-TO252-3
包装 剪切带 (CT)
其它名称 SPD07N20INCT
同类型PDF
SPD07N20 Infineon Technologies MOSFET N-CH 200V 7A TO-252
SPD07N20 G Infineon Technologies MOSFET N-CH 200V 7A TO252
SPD07N60C3 Infineon Technologies MOSFET N-CH 650V 7.3A DPAK
SPD07N60C3 Infineon Technologies MOSFET N-CH 650V 7.3A DPAK
SPD07N60C3T Infineon Technologies MOSFET N-CH 650V 7.3A DPAK
SPD07N60C3T Infineon Technologies MOSFET N-CH 650V 7.3A DPAK
SPD07N60C3T Infineon Technologies MOSFET N-CH 650V 7.3A DPAK
SPD07N60S5 Infineon Technologies MOSFET N-CH 600V 7.3A DPAK
SPD07N60S5 Infineon Technologies MOSFET N-CH 600V 7.3A DPAK
SPD07N60S5T Infineon Technologies MOSFET N-CH 600V 7.3A DPAK
SPD07N60S5T Infineon Technologies MOSFET N-CH 600V 7.3A DPAK
SPD08-020-RB-TR 3M CONN HIGH SPD CARD EDGE 20 POS
SPD08-020-RB-TR 3M CONN HIGH SPD CARD EDGE 20 POS
SPD08-020-RB-TR 3M CONN HIGH SPD CARD EDGE 20 POS
SPD08-080-L-RB-TR 3M CONN CARD EDGE 80 POS W/LATCH
SPD08-080-L-RB-TR 3M CONN CARD EDGE 80 POS W/LATCH
SPD08-080-L-RB-TR 3M CONN CARD EDGE 80 POS W/LATCH
SPD08-080-RB-TR 3M CONN HIGH SPD CARD EDGE 80 POS
SPD08-080-RB-TR 3M CONN HIGH SPD CARD EDGE 80 POS
SPD08-080-RB-TR 3M CONN HIGH SPD CARD EDGE 80 POS